Title:
スパッタリングターゲット及びスパッタリングターゲットの製造方法
Document Type and Number:
Japanese Patent JP7081394
Kind Code:
B2
Abstract:
This sputtering target contains Cu and In as metal components, and is composed of a composite structure that comprises a metallic phase (12) and an oxide phase (11), wherein the oxide phase (11) has an area percentage within a range of 5-96% and has a density ratio of at least 90%. The sputtering target production method according to the present invention comprises: a sintering raw material powder formation step (S01) for obtaining a sintering raw material powder which includes a metallic powder comprising Cu powder and/or In-Cu alloy powder and an oxide powder comprising CuO powder and/or In2O3 powder, wherein the ratio DM/DO of a median diameter DM of the metallic powder to a median diameter DO of the oxide powder falls within a range of 0.5-200; and a sintering step (S02) for obtaining a sintered body by applying pressure on the sintering raw material powder and heating said raw material powder up to a temperature lower than 1000°C.
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Inventors:
Keita Umemoto
Atsushi Sai Rattan
Takanori Shirai
Atsushi Sai Rattan
Takanori Shirai
Application Number:
JP2018159246A
Publication Date:
June 07, 2022
Filing Date:
August 28, 2018
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
C23C14/34; C22C1/05; C22C5/04; C22C9/00; C22C29/12; C22C32/00; C23C14/08
Domestic Patent References:
| JP2016027195A | ||||
| JP2014237889A | ||||
| JP2001355065A |
Attorney, Agent or Firm:
Yasushi Matsunuma
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
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