To provide a sputtering target material for forming Bi-Sr-Ta-O system ferroelectric substance thin films having little irregularity between the Bi compo nent contents of the formed thin films.
This sputtering target material for forming a Bi-Sr-Ta-O system ferroelectric substance thin film satisfying the composition formula: BiαSrβTaγOδ [when (γ) of Ta as a standard is 2.0, (α), (β) and (δ) exhibit an atomic ratio of (1.8-2.4):(0.8-1.1):(8.5-9.8)] comprises the hot press-molded product of a powder mixture comprising Bi powder, strontium oxide powder, and Ta powder, having an average particle diameter of 1-100 μm. The hot press-molded product has a composition satisfying a Bi:Sr:Ta atomic ratio of (0.8-2.0):(0.8-1.2):2.0, a structure in which strontium oxide and Ta are homogeneously dispersed and distributed in a substrate of Bi, and a theoretical density ratio of ≥99.5%.
WATANABE KAZUO
MISHIMA TERUSHI
