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Patent Searching and Data


Title:
SPUTTERING TARGET AND REUTILIZING METHOD THEREOF
Document Type and Number:
Japanese Patent JPH08176809
Kind Code:
A
Abstract:

PURPOSE: To remarkably improve the efficiency in using a magnetron sputtering target by changing the remakably consumed region of the target for the less consumed or unconsumed region.

CONSTITUTION: As for a plasma-type magnetron sputtering target, for example, two blocks of the target 2 with the parting lines A and B as the opposite sides and the two blocks on both sides with the parting line A and end side C as the opposite sides are respectively turned to an angle of 180° ((a) is replaced by (b), (c) by (d), (e) by (f) and (g) by (h)). Namely, the remarkably consumed region is changed for the less consumed or unconsumed region, relocated and rebonded. Consequently, since the target is reutilized, the efficiency in using the target is greatly improved.


Inventors:
NAKAGAMA SUSUMU
HAYASHI ATSUSHI
HAMANO SUNAO
KOIZUMI TSUNEMITSU
Application Number:
JP31847194A
Publication Date:
July 09, 1996
Filing Date:
December 21, 1994
Export Citation:
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Assignee:
ASAHI GLASS CO LTD
International Classes:
C23C14/34; C23C14/35; (IPC1-7): C23C14/34; C23C14/35
Attorney, Agent or Firm:
Kenji Izumina