Title:
SPUTTERING TARGET AND METHOD FOR MANUFACTURING SPUTTERING TARGET
Document Type and Number:
Japanese Patent JP2023110585
Kind Code:
A
Abstract:
To provide a sputtering target that can more stably deposit a film of a ZnGaO-based material.SOLUTION: A sputtering target includes a sintered compact including a ZnGaO-based oxide having a specific resistance of 10 Ωcm or less. In the sintered compact, Zn/(Zn+Ga) is 40 atm% or more and less than 50 atm%.SELECTED DRAWING: None
Inventors:
TODA TATSUYA
YOSHINO HARUHIKO
ISHIKAWA TAKUYA
KANDA KOICHI
KAMIYAMA TOSHIHISA
YOSHINO HARUHIKO
ISHIKAWA TAKUYA
KANDA KOICHI
KAMIYAMA TOSHIHISA
Application Number:
JP2022012126A
Publication Date:
August 09, 2023
Filing Date:
January 28, 2022
Export Citation:
Assignee:
AGC INC
AGC CERAM CO LTD
AGC CERAM CO LTD
International Classes:
C23C14/34; C04B35/453
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito