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Title:
スパッタリングターゲット、透明導電膜およびそれらの製造法
Document Type and Number:
Japanese Patent JP5431424
Kind Code:
B2
Abstract:
A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic% of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 µm or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably.

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Inventors:
Kazuyoshi Inoue
Shigeo Matsuzaki
Application Number:
JP2011155678A
Publication Date:
March 05, 2014
Filing Date:
July 14, 2011
Export Citation:
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Assignee:
IDEMITSU KOSAN CO.,LTD.
International Classes:
C23C14/34; C04B35/00; C23C14/08; H01B1/08; H01B5/14; H01B13/00; H01L31/18
Domestic Patent References:
JP7335046A
Foreign References:
WO2001038599A1
Attorney, Agent or Firm:
Kihei Watanabe
Yuko Tanaka
Takeshi Sato



 
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