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Title:
STARTING MATERIAL FOR SILICON CARBIDE-BASED REFRACTORY
Document Type and Number:
Japanese Patent JPH03228871
Kind Code:
A
Abstract:

PURPOSE: To improve thermal shock resistance, bending strength and oxidation resistance by using SiC powder and specified Si powder as essential components.

CONSTITUTION: Starting material for SiC-based refractories is obtd. by mixing 60-90wt.% SiC powder with 8-25wt.% Si powder of 3-15μm average particle size having oxygen remaining on the surface or in the interior by ≤1.5 pts.wt. per 100 pts.wt. Si powder and clay. Water and a binder are added to the starting material and they are kneaded and compression-molded. The resulting molded body is dried and fired in an inert gaseous atmosphere.


Inventors:
HANZAWA SHIGERU
ITO TOSHIYUKI
Application Number:
JP2118590A
Publication Date:
October 09, 1991
Filing Date:
January 31, 1990
Export Citation:
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Assignee:
NGK INSULATORS LTD
NGK ADREC CO LTD
International Classes:
C04B35/626; C04B35/56; (IPC1-7): C04B35/56
Domestic Patent References:
JPS5888168A1983-05-26
JPS5888169A1983-05-26
JPS57145075A1982-09-07
JPS5560070A1980-05-06
Attorney, Agent or Firm:
Hattori Masaki



 
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