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Title:
STENCIL MASK FOR ION IMPLANTATION
Document Type and Number:
Japanese Patent JP2004158527
Kind Code:
A
Abstract:

To provide a stencil mask for ion implantation in which the lifetime and durability can be enhanced at the thin film part.

The stencil mask for ion implantation has a through hole pattern for ion implantation formed at a thin film part supported on a support wherein an ion absorbing layer is formed at least on the side (surface side) of the thin film part being irradiated with an ion beam. Since the ion absorbing layer is formed, lifetime and durability can be enhanced at the thin film part of the stencil mask for ion implantation.


Inventors:
AMAMIYA ISAO
Application Number:
JP2002320872A
Publication Date:
June 03, 2004
Filing Date:
November 05, 2002
Export Citation:
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Assignee:
HOYA CORP
International Classes:
G03F1/20; H01J37/305; H01L21/266; (IPC1-7): H01L21/266; G03F1/16; H01J37/305
Domestic Patent References:
JPH04243118A1992-08-31
JPS58106822A1983-06-25
JP2002203806A2002-07-19
JPS58190029A1983-11-05
JPS55161242A1980-12-15
Foreign References:
WO2004003985A12004-01-08
Attorney, Agent or Firm:
Yasuo Fujimura



 
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