Title:
STORAGE CELL, MEMORY CELL AND STORAGE CIRCUIT BLOCK
Document Type and Number:
Japanese Patent JP2002353415
Kind Code:
A
Abstract:
To provide a storage cell having a small current for writing and a small change of a switching magnetic field, and to provide a memory cell and a storage circuit block.
The storage cell 10 comprises a plurality of superposed layers, a free ferromagnetic layer 12 in which the direction of a magnetization is changed by the direction of a magnetic field in a plurality of the layers, and a hollow part 19 formed, so as to pass the central part of the plurality of the layers through the plurality of the layers. The memory cell 20 comprises a conductor 22, in which a writing current flows to the hollow part 19 of the cell 10.
Inventors:
UMEZAKI HIROSHI
MIYATAKE HISATADA
NODA HIROYOSHI
ASANO HIDEO
SUNANAGA TOSHIO
KITAMURA TSUNEJI
MIYATAKE HISATADA
NODA HIROYOSHI
ASANO HIDEO
SUNANAGA TOSHIO
KITAMURA TSUNEJI
Application Number:
JP2001154215A
Publication Date:
December 06, 2002
Filing Date:
May 23, 2001
Export Citation:
Assignee:
IBM
International Classes:
G11C11/14; G11C11/15; H01L21/8246; H01L27/10; H01L27/105; H01L43/08; (IPC1-7): H01L27/105; G11C11/14; G11C11/15; H01L27/10; H01L43/08
Attorney, Agent or Firm:
Hiroshi Sakaguchi (2 outside)
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