Title:
STORAGE DEVICE AND ITS SELF-TEST METHOD
Document Type and Number:
Japanese Patent JP2008108326
Kind Code:
A
Abstract:
To provide a storage device and its self-test method in which circuit correction can be prevented and a manufacturing cost can be reduced even when a test process is changed.
The memory device is provided with a nonvolatile memory 11 storing process items, a parameter start address PA, and parameters in which an address corresponds to the parameter start address and the process items are prescribed, and a control circuit 12 constituted so that the test process conformed to the process items prescribed in the parameters is performed for the nonvolatile memory, in the same chip.
Inventors:
SUZUKI TAKAHIRO
FUJISAWA SHINYA
HASHIMOTO SHOICHIRO
HARA NORIMASA
FUJISAWA SHINYA
HASHIMOTO SHOICHIRO
HARA NORIMASA
Application Number:
JP2006288976A
Publication Date:
May 08, 2008
Filing Date:
October 24, 2006
Export Citation:
Assignee:
TOSHIBA CORP
TOSHIBA INFORMATION SYS JAPAN
TOSHIBA INFORMATION SYS JAPAN
International Classes:
G11C29/12; G06F12/16; G11C16/02
Domestic Patent References:
JP2004239760A | 2004-08-26 | |||
JP2004333246A | 2004-11-25 | |||
JP2004030765A | 2004-01-29 | |||
JPH09289234A | 1997-11-04 | |||
JPH0817880A | 1996-01-19 | |||
JP2000321332A | 2000-11-24 | |||
JPH05143474A | 1993-06-11 | |||
JP2007164839A | 2007-06-28 | |||
JP2002352600A | 2002-12-06 | |||
JPH11202028A | 1999-07-30 | |||
JP2006085769A | 2006-03-30 |
Foreign References:
WO2004086411A1 | 2004-10-07 |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto