Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2022189331
Kind Code:
A
Abstract:
To provide a storage device capable of operating on a lower current than ever before.SOLUTION: A storage device 10 comprises a phase change layer 40 containing tellurium and a diffusion layer 50 arranged in a position adjacent to the phase change layer 40 and containing at least one of germanium, silicone, carbon, tin, aluminum, gallium, and indium. The phase change layer 40 can reversibly make a transition between a first state and a second state both of which differ from each other in electric resistance. The phase change layer 40 is in a crystal state in any of the first state and the second state. A length of the diffusion layer 50 along a direction perpendicular to a z direction is shorter than a length of the phase change layer 40 along the same direction.SELECTED DRAWING: Figure 4
Inventors:
SUZUKI KUNIFUMI
KAMIMUTA YUICHI
KAMIMUTA YUICHI
Application Number:
JP2021097861A
Publication Date:
December 22, 2022
Filing Date:
June 11, 2021
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L21/8239; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Tohru Kamada
Takuma Tsuda
Kenro Murai
Takuma Tsuda
Kenro Murai