Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2023132766
Kind Code:
A
Abstract:
To provide a storage device that reads data in a short time.SOLUTION: A memory device according to an embodiment includes first wiring, second wiring, a memory cell, a first circuit, a second circuit, a third circuit, a fourth circuit, and a sense amplifier circuit. The memory cell is connected between the first wiring and the second wiring and includes a variable resistance element and a switching element. The variable resistance element includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The first circuit is configured to apply a first voltage to the first wiring. The second circuit is configured to apply a second voltage to the second wiring. The third circuit is configured to apply a third voltage to the second wiring. The fourth circuit is configured to apply a fourth voltage to the first wiring. The sense amplifier circuit is connected to the first wiring and the second wiring.SELECTED DRAWING: Figure 7
Inventors:
KOBAYASHI YOSUKE
Application Number:
JP2022038284A
Publication Date:
September 22, 2023
Filing Date:
March 11, 2022
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
G11C11/16; H10B61/00; H10N50/10; H10N50/80
Attorney, Agent or Firm:
Patent Attorney Corporation Suzue Patent General Office