Title:
記憶装置
Document Type and Number:
Japanese Patent JP6971898
Kind Code:
B2
Abstract:
A memory device according to an embodiment includes: a first conductive layer extending in a first direction; a second conductive layer extending in the first direction; a third conductive layer extending in a second direction intersecting the first direction, the third conductive layer being provided between the first conductive layer and the second conductive layer; a fourth conductive layer that extends in the second direction and is provided between the first conductive layer and the second conductive layer; a first connection portion connecting a first end portion of the third conductive layer and a first end portion of the fourth conductive layer; and a first resistance change layer provided between the first conductive layer and the third conductive layer.
Inventors:
Nao Iguchi
Application Number:
JP2018055415A
Publication Date:
November 24, 2021
Filing Date:
March 23, 2018
Export Citation:
Assignee:
Kioxia Co., Ltd.
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Foreign References:
| US20160020255 | ||||
| US20160233270 |
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Masahiro Takashita
Mitsuyuki Matsuyama
Akira Sudo
Masahiro Takashita
Mitsuyuki Matsuyama