To provide a memory element which has a larger number of times for repeatable operation than conventional ones, and exhibits a stable resistance varying switching characteristic.
The memory element 1A has a memory layer 17 and an upper electrode 18 on a lower electrode 14 and an insulating film 15. The memory layer 17 comprises the laminating-layer structure of a high-resistance layer and an ion-source layer. The high-resistance layer is formed out of the oxide film of Gd (gadolinium), and the ion-source layer contains such metal elements as Cu (copper), Zr (zirconium), Al (aluminum), and so forth together with such chalcogenide elements as S (sulfur), Se (selenium), Te (tellurium), and so forth. The insulation film 15 has a recessed portion 16, and the lower electrode 14 contacts with the memory layer 17 in the recessed portion 16. The depth of the recessed portion 16 is not smaller than 2 nm and not larger than 20 nm preferably, and is not smaller than 5 nm and not larger than 16 nm more preferably.
COPYRIGHT: (C)2009,JPO&INPIT
Endo Keitaro
Satoshi Sasaki
Akira Kawauchiyama
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| US6348365 |
Yasushi Santanzaki
Masao Hasebe