Title:
STRUCTURE AND MANUFACTURE OF CONTACT FOR ELECTRODE TERMINAL OF IC
Document Type and Number:
Japanese Patent JP2001050980
Kind Code:
A
Abstract:
To obtain a structure and manufacturing method for a fine contact which can get electrical connection, without scratching the electrode terminal of a wafer, bare chip, BGA, LGA, etc.
In a structure for contact, an organic elastic material 2 is enclosed inside a metallic film 3 formed on the surface of a metallic land 1b provided on a wiring board 1 and the material 2. Since the surface of the structure is composed of a metal having a low electrical resistance and the inside of the structure is soft, a contact that is apt to be deformed elastically can be manufactured. In addition, the film 3 and land 5 are formed integrally, and the strength of the contact also becomes higher.
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Inventors:
TANIGUCHI YUZO
Application Number:
JP25341999A
Publication Date:
February 23, 2001
Filing Date:
August 04, 1999
Export Citation:
Assignee:
TANIGUCHI CONSULTING ENGINEERS
International Classes:
G01R1/073; H01L21/60; H05K3/32; (IPC1-7): G01R1/073; H01L21/60; H01R12/32; H05K3/32
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