To obtain a phase shift mask which is improved in reliability and is enhanced in translucency of light by forming a phase shift layer on a translucent substrate, an adhesive layer on the phase shift layer and a light shielding layer on the adhesive layer.
A substrate protective layer 21 is formed on a transparent substrate 20 consisting of quartz or glass and the phase shift layer 22 having open regions is formed thereon. The adhesive layer 23 formed to project into the open regions from both edges of these regions is formed on the phase shift layer 22 and the light shielding layer 24 is formed on the adhesive layer 23. The substrate protective layer 21 is formed of SnO2, etc., which are materials having translucency and having corrosion resistance to an SOG etching liquid. The phase shift layer 22 is formed of oxide, SOG, etc., which have low light adsorptivity and allow low-temp. deposition. The adhesive layer 23 is formed of SiN, TiN, etc., which are materials having the etching rate different from the etching rate of the phase shift layer 22. The light shielding layer 24 is formed of chromium.
PARK CHAN-MIN
LEE JUN-SEOK
