To provide a structure such as an EBG structure achieving a band gap having a broad band at low cost and in compact size by increasing an inductance component without increasing the number of layers.

The problem is solved by using the structure 5a in which a metal plane 3, a dielectric body layer 1, a metal patch 2, a first via 4a, a second via 4b and a third via 4c are provided; a patch side clearance 10, inside of which a patch side connecting wire 11 is disposed, is disposed as a cutout part in the metal patch 2; a plane side clearance 13, inside of which a plane side connecting wire 12 is disposed, is formed corresponding to the patch side clearance 10 as the cutout part in the metal plane 3; and a unit connecting body 9 is formed by connecting the metal plane 3, the first via 4a, the patch side connecting wire 11, the second via 4b, the plane side connecting wire 12, the third via 4c and the metal patch 2.