Title:
SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2009228058
Kind Code:
A
Abstract:
To provide a substrate for an electronic device, in which an oriented tantalum nitride film is disposed, and to provide a method for manufacturing the substrate.
When reactive sputtering is performed by using a base material 1 composed of silicon and having a (111)-oriented surface 1a for film deposition, a target formed from Ta, and a process gas comprising Ar and N2, at least a (100)-oriented tantalum nitride film is formed on the surface 1a for film deposition of the base material 1. From the results, a (111)-oriented substrate 10 for an electronic device, constituted of the (100)-oriented tantalum nitride film, is provided.
Inventors:
UEKUSA SHINICHIRO
Application Number:
JP2008074516A
Publication Date:
October 08, 2009
Filing Date:
March 21, 2008
Export Citation:
Assignee:
UNIV MEIJI
International Classes:
C23C14/06; C23C14/34; H01L21/28; H01L21/285
Domestic Patent References:
| JPH08325721A | 1996-12-10 | |||
| JP2000261033A | 2000-09-22 | |||
| JPH11260835A | 1999-09-24 | |||
| JPH07125218A | 1995-05-16 |
Attorney, Agent or Firm:
Masatake Shiga
Sumio Tanai
Tadashi Takahashi
Mitsunaga Igarashi
Sumio Tanai
Tadashi Takahashi
Mitsunaga Igarashi