Title:
SUBSTRATE FLOWING-IN CLAMP AND METHOD FOR THE SAME
Document Type and Number:
Japanese Patent JPH0358428
Kind Code:
A
Abstract:
PURPOSE: To obtain a high current substrate flow-in clamp without imposing undue restrictions on the geometrical layout of an IC by employing a transistor having an emitter connected with a work potential source and a base responsive to a control signal and being rendered nonconductive with a nonconduction control signal thereby minimizing the required die area. CONSTITUTION: A transistor 12 normally operates in a forward mode where a current flows from a collector to an emitter. When the collector voltage goes negative with respective the emitter and the base-collector junction is biased forward, the transistor 12 also operates in reverse mode where a current flows from the emitter to the collector. Consequently, the transistor 12 feeds a current to an output 16 in reverse mode and sustains the voltage thereof at a level lower than the cut-in potential of a parasitic diode 22 thus preventing a current from flowing into a P-substrate. This arrangement realizes a substrate flow-in clamp having a minimized die area.
Inventors:
JIYON EMU PIGOTSUTO
Application Number:
JP18962590A
Publication Date:
March 13, 1991
Filing Date:
July 19, 1990
Export Citation:
Assignee:
MOTOROLA INC
International Classes:
H01L29/73; G05F3/20; H01L21/331; H01L27/06; H03K17/082; (IPC1-7): H01L21/331; H01L23/522; H01L23/556; H01L23/60; H01L23/62; H01L29/73
Attorney, Agent or Firm:
Yoshiaki Ikeuchi
Next Patent: JPH0358429