To provide a substrate processing apparatus and a substrate processing method, that can improve the relative dielectric constant of a low permittivity insulating film formed on a surface of a substrate.
The substrate processing apparatus includes a spin chuck 2 holding a wafer W substantially horizontally, and a shield plate 3 which shields an atmosphere near the surface of the wafer W held with the spin chuck 2 from a periphery thereof. On a lower surface of the shield plate 3, a silylation agent nozzle 11 for discharging a silylation agent (HMDS gas) and a nitrogen gas discharge port 15 for discharging a nitrogen gas are formed. In a state wherein the shield plate 3 is disposed opposite the surface of the wafer W held with the spin chuck 2, the nitrogen gas is supplied to between the wafer W and shield plate 3 from the nitrogen gas discharge port 15. Further, in a state wherein the shield plate 3 is disposed opposite the surface of the wafer held with the spin chuck 2, the silylation agent is supplied to between the wafer W and shield plate 3 from the silylation agent nozzle 11.
Mio Kawasaki
Yuichi Minagawa