Title:
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2020107713
Kind Code:
A
Abstract:
To provide a technique capable of suppressing the oxidation of the surface of an electrode layer formed on a substrate and suppressing the electric resistance between the electrode layer and another electrode layer.SOLUTION: A substrate processing apparatus 1 processes a substrate G on which a first electrode layer is formed on the surface before forming a second electrode layer. The substrate processing apparatus 1 includes a plasma generation unit 40. The plasma generation unit 40 converts a reducing first gas into plasma under atmospheric pressure, and discharges a second gas containing the plasma toward the first electrode layer of the substrate G. Therefore, the second gas comes into contact with the surface of the first electrode layer, and the surface of the first electrode layer is efficiently reduced. As a result, the electrical resistance between the first electrode layer and the second electrode layer can be suppressed.SELECTED DRAWING: Figure 3
Inventors:
KAKIMURA TAKASHI
Application Number:
JP2018244758A
Publication Date:
July 09, 2020
Filing Date:
December 27, 2018
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD
International Classes:
H01L21/3065; H01L21/3205; H01L21/768; H01L23/532; H05H1/24
Attorney, Agent or Firm:
Takami Nishida