PURPOSE: To eliminate residue and Ar spatter surface roughening in conventional cleaning and drying by irradiating the surface of substrate by laser beam and removing foreign matters in a moment by heat generation and evaporation as a means of cleaning the surface of substrate in growing a thin film of semiconductor.
CONSTITUTION: A stainless substrate and a quartz substrate 3 20mm×20mm×1mm in size and cleaned with liquid by conventional way are attached to a substrate holder 2 contained in a vacuum container 5. They are then irradiated by a ruby laser beam at energy of about 100 milliwat at a degree of vacuum of 10 torr. Immediately after this, a thin film of amorphous silicon is grown by glow discharge method. Consequently, a thin film of better quality having very few pinhole and does not cause peeling off of the film can be obtained compared with substrate made by conventional cleaning only. Better result is obtained by irradiating a ruby laser beam after vapor depositing Al or Au thinly on the quartz substrate.
ISHIHARA SHINICHIROU
MORI KOUSHIROU
