Title:
高光抽出LED用の基板除去方法
Document Type and Number:
Japanese Patent JP2008532281
Kind Code:
A
Abstract:
A method for fabricating light emitting diode (LEDs) comprises providing a plurality of LEDs on a substrate wafer, each of which has an n-type and p-type layer of Group-III nitride material formed on a SiC substrate with the n-type layer sandwiched between the substrate and p-type layer. A conductive carrier is provided having a lateral surface to hold the LEDs. The LEDs are flip-chip mounted on the lateral surface of the conductive carrier. The SiC substrate is removed from the LEDs such that the n-type layer is the top-most layer. A respective contact is deposited on the n-type layer of each of the LEDs and the carrier is separated into portions such that each of the LEDs is separated from the others, with each of the LEDs mounted to a respective portion of said carrier.
Inventors:
John Edmond
Application Number:
JP2007557010A
Publication Date:
August 14, 2008
Filing Date:
September 15, 2005
Export Citation:
Assignee:
CREE INC.
International Classes:
H01L21/52; H01L33/00
Domestic Patent References:
| JP2004266240A | 2004-09-24 | |||
| JP2004508720A | 2004-03-18 | |||
| JP2001119104A | 2001-04-27 | |||
| JPH02102557A | 1990-04-16 | |||
| JPH11220176A | 1999-08-10 | |||
| JP2000012913A | 2000-01-14 | |||
| JP2003304036A | 2003-10-24 | |||
| JPS61158146A | 1986-07-17 |
Other References:
JPN6013031322; Ｓｔｏｎａｓ 他: '"Ｂａｃｋｓｉｄｅ-ｉｌｕｍｉｎａｔｅｄ ｐｈｏｔｏｅｌｅｃｔｏｒｏｃｈｅｍｉｃａｌ ｅｔｃｈｉｎｇ ｆｏｒ ｔｈｅ ｆａｂｒｉｃａｔｉｏｎ ｏｆ ｄｅｅｐｌｙ ｕｎｄｅｒｃｕｔ ＧａＮ ｓｔｒｕｃｔ' Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ Ｖｏｌ．７７， ｎｏ．１６, 20001016, ｐ．２６１０-２６１２
JPN6013031324; Ｏｓｔｅｒｍａｙｅｒ 他: '"Ｐｈｏｔｏｅｌｅｃｔｏｃｈｅｍｉｃａｌ ｅｔｃｈｉｎｇ ｏｆ ｉｎｔｅｇｒａｌ ｌｅｎｓｅｓ ｏｎ ＩｎＧａＡｓＰ／ＩｎＰ ｌｉｇｈｔ ｅｍｉｔｔｉｎｇ ｄｉｏｄｅｓ"' Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ Ｖｏｌ．４３， ｎｏ．７, 19831001, ｐ．６４２-６４４
JPN6013031324; Ｏｓｔｅｒｍａｙｅｒ 他: '"Ｐｈｏｔｏｅｌｅｃｔｏｃｈｅｍｉｃａｌ ｅｔｃｈｉｎｇ ｏｆ ｉｎｔｅｇｒａｌ ｌｅｎｓｅｓ ｏｎ ＩｎＧａＡｓＰ／ＩｎＰ ｌｉｇｈｔ ｅｍｉｔｔｉｎｇ ｄｉｏｄｅｓ"' Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ Ｖｏｌ．４３， ｎｏ．７, 19831001, ｐ．６４２-６４４
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe
Kazuo Abe