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Title:
SUBSTRATE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2017119624
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate for a semiconductor device which is a composite semiconductor part having a wafer of a synthetic diamond material and a layer of a compound semiconductor material.SOLUTION: A composite semiconductor part has a substrate having a wafer of a synthetic diamond material, and a layer of a compound semiconductor material, for example, gallium nitride (GaN), on the substrate. The layer of the compound semiconductor material has a tensile stress below 500 MPa at room temperature, for example, a tensile stress below 450 MPa, below 400 MPa, below 350 MPa, below 300 MPa, below 250 MPa or below 210 MPa at room temperature.SELECTED DRAWING: Figure 1

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Inventors:
TIMOTHY MOLLART
JIANG QUANZHONG
MICHAEL JOHN EDWARDS
DUNCAN ALLSOPP
CHRISTOPHER RHYS BOWEN
WANG WANG NANG
Application Number:
JP2017012812A
Publication Date:
July 06, 2017
Filing Date:
January 27, 2017
Export Citation:
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Assignee:
RFHIC CORP
International Classes:
C30B29/38; H01L21/20
Domestic Patent References:
JP2008533312A2008-08-21
JP2012109583A2012-06-07
JP2010272781A2010-12-02
JP2008528420A2008-07-31
JP2000219597A2000-08-08
JP2007273814A2007-10-18
JPH08133893A1996-05-28
JP2007284285A2007-11-01
Foreign References:
US20120187374A12012-07-26
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki



 
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