Title:
SUBSTRATE FOR SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS61102744
Kind Code:
A
Abstract:
PURPOSE:To form a substrate, which is hardly affected by heat cycles extending over a large number of times and has long lifetime, by interposing a thin-film layer consisting of alumina between a metallic plate and an evaporating insulating film through foundation treatment. CONSTITUTION:The manufacture is characterized by the formation of a thin- layer 3 composed of alumina between a metallic plate 1 and an inorganic insulating coating layer 2, and adhesive properties between the metallic plate 1 and the coating layer 2 in a product acquired by the interposing layer 3 are improved largely, thus shaping an electric insulating and heat-dissipating substrate, adhesive properties thereof are not deteriorated even by a heat cycle test and which has long lifetime. The thickness of the alumina sheet 3 as the interposing layer must be kept within a range, preferably, 0.05-0.3mum, and the thickness of the coating layer 2 must be maintained within a range, preferably, 5-10mum.
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Inventors:
KUDO KAZUNAO
IHARA HIROHIKO
IHARA HIROHIKO
Application Number:
JP22546484A
Publication Date:
May 21, 1986
Filing Date:
October 26, 1984
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L21/52; H01L21/58; (IPC1-7): H01L21/58
Attorney, Agent or Firm:
Takashi Koshiba