Title:
SUBSTRATE FOR SEMICONDUCTOR STRUCTURE HAVING HIGH THERMAL CONDUCTIVITY
Document Type and Number:
Japanese Patent JP2003124407
Kind Code:
A
Abstract:
To obtain a substrate having a high thermal conductivity and a structural integrality with a thick board, related to a semiconductor device.
The substrate 100 includes a body 11 having an upper surface 114 and a bottom surface 112 opposite to the upper surface 114 and having the first thermal conductivity, a cavity 116 defined by an inner surface 113 of the body 110 and opened at least on the bottom surface 112, and at least one material 120 disposed in the cavity 116 having the second thermal conductivity higher than the first thermal conductivity and coming into contact with at least a part of the inner surface 113.
Inventors:
ROMANO LINDA T
KNEISSL MICHAEL A
NORTHRUP JOHN E
KNEISSL MICHAEL A
NORTHRUP JOHN E
Application Number:
JP2002288232A
Publication Date:
April 25, 2003
Filing Date:
October 01, 2002
Export Citation:
Assignee:
XEROX CORP
International Classes:
H01L23/36; H01L23/367; H01L29/06; H01L33/64; H01S5/02; H01S5/024; H01L27/15; (IPC1-7): H01L23/36
Domestic Patent References:
| JPH0629376A | 1994-02-04 | |||
| JPH0669601A | 1994-03-11 |
Attorney, Agent or Firm:
Kenji Yoshida (1 person outside)