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Patent Searching and Data


Title:
SUBSTRATE SUPPORT OF DEVICE FOR FORMING THIN FILM
Document Type and Number:
Japanese Patent JPS6474716
Kind Code:
A
Abstract:

PURPOSE: To improve heating efficiency of a substrate by constituting a substrate support of an inorganic substance having higher thermal conductivity than quartz glass together with high transmittivity of infrared rays.

CONSTITUTION: A subject substrate support is constituted of an inorganic substance having more than 5W/m.k of thermal conductivity besides transmitting infrared rays all of wavelength 7W30μm or of a partial wavelength region. For instance, thermal conductivity of alumina is 36W46W/m.k higher than thermal conductivity of quartz glass besides transmitting infrared rays of 7W8.5μm, which is a part of wavelength absorbed by a silicon substrate. This alumina is used as the substrate support 5 of a thin film formation device. Thereby, heating efficiency of the substrate 4 can be heightened. For instance, when a tungsten film is formed on the silicon substrate 4 using this support 5, high piling-up speed can be obtained because of being able to heat the substrate 4 up to high temperature.


Inventors:
KAJI SHIGEHIKO
Application Number:
JP23102387A
Publication Date:
March 20, 1989
Filing Date:
September 17, 1987
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L21/205; H01L21/263; H01L21/285; (IPC1-7): H01L21/205; H01L21/263; H01L21/285