SUBSTRATE SUPPORTING DEVICE FOR CHEMICAL VAPOR DEPOSITION

Japanese Patent JPH08181080

A

PROBLEM TO BE SOLVED: To deposit a film uniformly on the surface of a wafer while preventing formation of film on the rear and the outer circumferential surface thereof by disposing a substrate support apparatus in the processing chamber of a chemical deposition system including a platen and an extension member. SOLUTION: A platen 200 equipped with a vacuum chuck is a circular block 202 of aluminum and vacuum holes 205a-205h are made in the upper surface of a plastic 202 with vacuum grooves 206a-206h being extended radially therefrom. An annular gas groove 210 is made in the outer circumferential part 211 on the upper surface of the platen block 202 disposed on the outside of the outermost concentric vacuum groove 208c. The gas groove 210 intersects a network comprising radial gas lines 212a-212j and distributes gas toward the rear of a wafer to be processed. The radial gas lines 212a-212j are arranged radially, at an interval of 36 deg., on the platen 202.

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VAN DE VEN EVERHARDUS P (US)
BROADBENT ELIOT K (US)
BENZING JEFFREY C (US)
CHIN BARRY L (US)
BURKHART CHRISTOPHER W (US)

JP23603195A

July 12, 1996

August 22, 1995

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NOVELLUS SYSTEMS INC (US)

C23C16/04; C23C16/44; C23C16/455; C23C16/458; C23C16/54; H01L21/00; H01L21/205; H01L21/28; H01L21/285; H01L21/31; H01L21/683; H01L21/687; (IPC1-7): H01L21/205; C23C16/44; H01L21/285; H01L21/31

JPH05283349A	1993-10-29
JPH04233221A	1992-08-21
JPH06120145A	1994-04-28
JP64020722B

Yoichi Oshima (1 outside)

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