Title:
SUBSTRATE SURFACE TREATMENT METHOD AND APPARATUS
Document Type and Number:
Japanese Patent JP2004089848
Kind Code:
A
Abstract:
To solve the problem of deterioration and a short circuit of wiring caused by ion migration due to further decrease of pitch between electrodes formed on an IC chip along with high integration of a circuit within the IC ship.
High-frequency waves of 100 W (power density of 0.32 W/cm2) are applied to a high frequency electrode 16 while vacuum degree in a reaction chamber 12 is maintained at 120 Pa to generate CF4 gas plasma. A module substrate 15 is treated with the generated CF4 gas plasma to form a fluorine-containing film efficiently. A surface of the module substrate 15 is coated with the a fluorine-containing film, thus corrosion of gold or copper wiring and the ion migration between substrate electrodes 9 of an FPC 2 are prevented.
Inventors:
SUZUKI NAOKI
TOMITA KAZUYUKI
NISHIKAWA EISHIN
OTANI HIROYUKI
TOKUNAGA MINEO
OKANO YUKO
TOMITA KAZUYUKI
NISHIKAWA EISHIN
OTANI HIROYUKI
TOKUNAGA MINEO
OKANO YUKO
Application Number:
JP2002254325A
Publication Date:
March 25, 2004
Filing Date:
August 30, 2002
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
B08B5/00; B08B7/00; H05K3/26; (IPC1-7): B08B5/00; B08B7/00; H05K3/26
Attorney, Agent or Firm:
Fumio Iwahashi
Tomoyasu Sakaguchi
Hiroki Naito
Tomoyasu Sakaguchi
Hiroki Naito
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