To provide a substrate treatment device and a substrate treatment method capable of ensuring uniformity of the in-plane temperature of a susceptor to prevent the susceptor from being damaged, and preventing a wafer from temperature-lowering and being contaminated with metals.

A film deposition apparatus 100 comprises a treatment container 1 to treat a wafer W, a susceptor 2 to place the wafer in the treatment container 1, a heater 5 to heat the susceptor 2, a wafer supporting pin 39 which is provided on a wafer placing face in a projecting/retracting manner to displace the wafer W in the placing state in which the wafer is abutted on the wafer placing face and a separate state in which the wafer is separated from the wafer placing face, and a cover ring which is provided displaceably between a state abutted on the wafer placing face and a state separate from the wafer placing face to cover the periphery of a wafer placing area on the wafer placing face in the abutted state. During the precoat, since a precoat film 50 is deposited on the surface of a dummy wafer Wd and the surface of the cover ring 4, no precoat film 50 is deposited on the wafer placing surface, the radiation rate is unified to prevent the susceptor 2 from being damaged.