Title:
SUBSTRATE TREATMENT DEVICE
Document Type and Number:
Japanese Patent JP2005340281
Kind Code:
A
Abstract:
To provide a substrate treatment device in which self-cleaning can more securely be performed.
Self-cleaning in a device forming a high dielectric constant film of Al2O3, HfO2 or Ta2O5 is performed by supplying Cl2 gas into a treatment furnace 202 from a Cl2 supply line 232f.
Inventors:
SATO TAKETOSHI
KYODA MASAYUKI
YAMAZAKI HIROHISA
KYODA MASAYUKI
YAMAZAKI HIROHISA
Application Number:
JP2004153544A
Publication Date:
December 08, 2005
Filing Date:
May 24, 2004
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC
International Classes:
H01L21/31; H01L21/304; (IPC1-7): H01L21/304; H01L21/31
Attorney, Agent or Firm:
Haruhiko Miyamoto
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