SUBSTRATE TREATMENT EQUIPMENT - HITACHI INT ELECTRIC INC

Title:

SUBSTRATE TREATMENT EQUIPMENT

Document Type and Number:

Japanese Patent JP2005197523

Kind Code:

A

Abstract:

To effectively prevent high-frequency noise occurring from a plasma source in a treatment chamber from being transmitted to a heating means provided outside of the treatment chamber though this substrate treatment equipment is compact.

The substrate treatment equipment is provided with a reaction tube 203 for forming the treatment chamber 201 inside, and treats a wafer 200 by utilizing plasma generated by the plasma source 250 in the treatment chamber 201. A conductive shield member 208 is formed between the treatment chamber 201 and a heater 207 provided outside of the treatment room 201, and a reaction tube 203 is covered with the shield member 208. By grounding E the shield member 208, the high-frequency noise occurring from the plasma source 250 in the treatment chamber 201 is suppressed.

Inventors:

KATO TSUTOMU
ONO KENJI

Application Number:

JP2004003285A

Publication Date:

July 21, 2005

Filing Date:

January 08, 2004

Export Citation:

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Assignee:

HITACHI INT ELECTRIC INC

International Classes:

C23C16/44; C23C16/509; H01L21/31; (IPC1-7): H01L21/31

Attorney, Agent or Firm:

Toru Yui
Aniya Setsuo
Hitoshi Kiyono

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