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Title:
SUBSTRATE VOLTAGE GENERATING CIRCUIT FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH04179157
Kind Code:
A
Abstract:
PURPOSE: To improve reliability by performing constitution from an oscillation part for generating prescribed oscillation signals, a voltage pump driving part for generating clock signals, a voltage pump part for generating a negative substrate voltage, a level sensing part for sensing the level of the substrate voltage and an oscillation driving part for outputting a bias voltage. CONSTITUTION: This substrate voltage generation circuit is constituted of the oscillation part 10, the voltage pump driving part 20, the voltage pump part 30, the level sensing part 40 and the oscillation driving part 50. Then, the oscillation part 10 compensates a resistance value by the change of a temperature and generates the oscillation signals ϕOSC for not changing an oscillation cycle and the voltage pump driving part 20 inputs the oscillation signals ϕOSC and generates mutually inverted clocks CK and CK after the lapse of prescribed delay time. The voltage pump part 30 inputs the inverted clocks CK and CK and generates the negative substrate voltage VBB. Also, the level sensing part 40 senses the state of the substrate voltage VBB generated by the voltage pump part 30 and the oscillation driving part 50 is operated in the case that the sensed voltage of the substrate voltage VBB is not a prescribed voltage value and outputs the bias voltages VOP and VON to the oscillation part 10. Thus, the change of the oscillation cycle is prevented.

Inventors:
MIN DONNSUN
SEO DONNIRU
Application Number:
JP30638190A
Publication Date:
June 25, 1992
Filing Date:
November 14, 1990
Export Citation:
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Assignee:
SAMSUNG ELECTRONIC
International Classes:
H01L27/04; G05F3/20; G11C11/408; H01L21/822; H03K3/03; H03L1/02; (IPC1-7): H01L27/04; H03L1/02
Domestic Patent References:
JP63143028B
JPS5265815A1977-05-31
JPS579257A1982-01-18
Attorney, Agent or Firm:
Hidekazu Miyoshi (1 outside)