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Title:
SUPERCONDUCTING FIELD EFFECT DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH05160454
Kind Code:
A
Abstract:
PURPOSE:To enable shortening of the gate length of a superconducting channel by forming superconducting source and drain regions as oxide superconducting films on bottom and top sides of a step of a substrate and by forming a superconducting channel as an extremely thin oxide superconducting thin film covering each region. CONSTITUTION:A film forming face of an MgO substrate 5 is provided with a step 51 and heat-treated to clean film forming faces 52, 53. Next, a c-axis oriented Y1B2Cu3O7-x oxide superconducting thin film l is formed. The part on a step of the oxide thin film 1 is selectively etched away and divided into a superconducting source region 2 and a superconducting drain region 3. As a result, the surface of an isolated superconducting source region 2 and of a superconducting drain region 3 turn smooth curve surfaces. A c-axis oriented Y1Ba2Cu3O7-x oxide superconducting thin film 11 serving as the superconducting channel is formed over it. Finally, a gate insulating layer 7 and a gate electrode 4 are formed over a superconducting channel 10.

Inventors:
NAKAMURA TAKAO
IIYAMA MICHITOMO
Application Number:
JP35018791A
Publication Date:
June 25, 1993
Filing Date:
December 10, 1991
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L39/22; H01L39/24; (IPC1-7): H01L39/22; H01L39/24
Domestic Patent References:
JPS63245972A1988-10-13
JPS6453474A1989-03-01
JPH01170080A1989-07-05
JPH02192774A1990-07-30
Attorney, Agent or Firm:
Takashi Koshiba



 
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