PURPOSE: To obtain the superconducting material made of metal having a high superconductivity transition temp. and heat resistance by adding a specified amt. of Ge to refractory metal such as W and Mo by a sputtering method or the like or alternately laminating W, Mo and Ge to form a multilayer film structure.
CONSTITUTION: Ge is added to at least one kind of W and Mo of refractory metal by a sputtering method, a chemical vapor growth method, a deposition method or a gaseous quenching method to form a thin film having a compsn. in which the amt. of Ge is regulated to 0.5 to 50 atom%. In the case the refractory metal is formed from W alone, the amt. of Ge is regulated to 0.5 to 30 atom% to form a thin film having an amorphous or microcrystalline structure. Or, it is possible that, instead of mixing W, Mo or the like with Ge, their thin films are alternately laminated to form a multilayer film structure, by which the superconducting material having the temp. of liquid He or above of superconductivity transition temp. and excellent in heat resistance can be obtd.
IGARASHI KAZUSUKATSU
NAITO MASAMI
KOBAYASHI NOBUYOSHI
KOBAYASHI TOSHIO
