Title:
SUPERCONDUCTING TRANSISTOR
Document Type and Number:
Japanese Patent JPH01135080
Kind Code:
A
Abstract:
PURPOSE:To realize a preferable integration, an input of two or more voltage signals and a logic function by one device by reducing the width of a first superconductor as compared with that of a protective film, and composing the superconductor and the film of specific materials. CONSTITUTION:An insulating film 2 is formed by thermally oxidizing the surface of a substrate 1, a first superconductor 3 is then formed, an opening is formed on a resist, and with a protective film 4 as a mask the superconductor 3 is worked. Then, after As ions are implanted, a high impurity concentration section 5 is formed by heating. Eventually, a superconducting electrode 6 and a second superconductor 7 are formed, and a superconducting transistor is obtained. Materials, such as NbN, Nb, MoN, etc., oxide, compound superconducting materials are employed as the materials of the superconductors, and Si, SiO2, Si3N4, MgO, Al2O3 are employed as the material of the protective film.
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Inventors:
NISHINO JUICHI
KAWABE USHIO
HASEGAWA HARUHIRO
HATANO MUTSUKO
KAWABE USHIO
HASEGAWA HARUHIRO
HATANO MUTSUKO
Application Number:
JP29202787A
Publication Date:
May 26, 1989
Filing Date:
November 20, 1987
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/78; H01L39/22; (IPC1-7): H01L29/78; H01L39/22
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)