Title:
SUPERLUMINESCENT DIODE
Document Type and Number:
Japanese Patent JPH04196492
Kind Code:
A
Abstract:
PURPOSE:To make it possible to take out a large output by enhancing its luminous efficiency by giving a distortion quantum well construction to an activated layer. CONSTITUTION:An n-type InP buffer layer 2 is provided on an n-type InP substrate 1, an n-type InGaAsP guide layer 3 is placed over said layer 2, and a multiple quantum well layer 4 is placed on said layer 3. Then, a p-type InGuAsP guide layer 5, a p-type InP clad layer 6 and p-type InG aAsP electrode layer 7 is placed in this order on said layer 4. Then, a thin film such as SiO2 or SiN is formed on the surface of the p-type InGaAsP electrode layer 7 by PF 2-pole sputter or CVD method and an activated layer is embedded. By doing this, luminous efficiency can be enhanced and a large output can be taken out.
Inventors:
YOSHIDAYA HIROAKI
YAMAGUCHI SHIGEMI
NAGAI HARUO
YAMAGUCHI SHIGEMI
NAGAI HARUO
Application Number:
JP32728190A
Publication Date:
July 16, 1992
Filing Date:
November 28, 1990
Export Citation:
Assignee:
ANRITSU CORP
International Classes:
H01L33/06; H01L33/10; H01L33/14; H01L33/30; H01L33/40; H01L33/44; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Ryutaro Koike
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