To provide a SAW device with a smaller device size than that of a conventional structure, a high Q value, and an excellent frequency temperature characteristic that can suppress the lateral high order mode spurious level.

In the surface acoustic wave device provided with a rotary Y-cut crystal substrate 1 whose cut angle θis set counterclockwise to a range of -64.0°<θ<-49.3°from a crystal Z axis and IDTs 2 made of Al or an alloy whose major component is Al formed on the crystal substrate 1, wherein the propagation direction of a surface acoustic wave is selected in a direction orthogonal to a crystal X axis and a stimulated surface acoustic wave employs an SH wave propagated around the surface of the crystal substrate 1, and a normalized electrode film thickness H/λ resulting from the electrode thickness normalized by the wavelength λ of the surface acoustic wave is selected to be 0.04<H/λ<0.12, a dummy electrode 11 is provided to each IDT 2.