Title:
SURFACE-EMISSION LASER BY OXYGEN ION-IMPLANTATION FOLLOWED BY EPITAXIAL REGROWTH
Document Type and Number:
Japanese Patent JP3417581
Kind Code:
B2
Abstract:
PURPOSE: To contain a current in a small region by forming an isolation region which encloses a small region of an active layer.
CONSTITUTION: A mirror layer 32 of a first group is formed epitaxially at a top part of a semiconductor substrate 30 and an active layer 34 is formed thereon. Oxygen ions are implanted to the active layer 34, excepting a small active region 34', and an isolation region 34" is formed. A P-n junction which generates coherent radiation almost monochromatically, when a current flows is incorporated in an active region. After oxygen implantation, a mirror layer 38 of a second group is formed at a top part of the active layer 34 and light generated in the active region 34' is returned to an active region again and more radiation is induced. The mirror layer 32 also exists below an active region for the same purpose. A contact layer is provided to a top part and a bottom surface of the composition. A current flows through an active region and generates radiation, when power is applied between both the contact layers. The isolation region 34" limits a current flowing in an active region, and laser efficiency is improved.
Inventors:
She Yuan Wan
Mycle T. Tan
Mycle T. Tan
Application Number:
JP26356192A
Publication Date:
June 16, 2003
Filing Date:
October 01, 1992
Export Citation:
Assignee:
AGILENT TECHNOLOGIES, INC.
International Classes:
H01S5/00; H01S5/042; H01S5/183; (IPC1-7): H01S5/183
Domestic Patent References:
| JP62173792A | ||||
| JP414276A | ||||
| JP2181985A | ||||
| JP5492191A |
Other References:
【文献】Optical Fiber Communication Conference,TUC3,p.11
Attorney, Agent or Firm:
Kaoru Furuya (2 outside)
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