Title:
SURFACE-EMITTING LASER
Document Type and Number:
Japanese Patent JP3717215
Kind Code:
B2
Abstract:
PURPOSE: To improve continuous wavelength single lateral mode operation output by causing the MQW active region to have many quantum wells at the center area than the peripheral area.
CONSTITUTION: An MQW active region 16 is epitaxially deposited as a plurality of quantum well layers on a lower spacer region 14. The active region 16 is formed by the etching in such radial layer structure that the total number of quantum wells at the center area 16a is gradually reduced in number to single well at the periphery area 16b of the isolated region 16. Optical gain of the quantum well saturates as the injected current increases due to the step like mode in the density of the electronic states. A single quantum well becomes transparent in the lowest intensity of injected current. The available total gain becomes higher with increase in the number of quantum wells. The available total gain radially changes by etching the structure radially from MQW at the mode center to SQW at the peripheral edge, and it is possible to maintain the basic lateral mode.
Inventors:
Martin david dawson
Timothy David Bestwick
Joffrey dagan
Timothy David Bestwick
Joffrey dagan
Application Number:
JP29459395A
Publication Date:
November 16, 2005
Filing Date:
November 13, 1995
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01S5/00; H01S5/183; H01S5/343; H01S5/20; H01S5/34; (IPC1-7): H01S5/183; H01S5/343
Domestic Patent References:
| JP5063303A | ||||
| JP6045694A | ||||
| JP8111559A | ||||
| JP6338661A | ||||
| JP7307525A |
Foreign References:
| WO1993022813A1 |
Attorney, Agent or Firm:
Hidesaku Yamamoto
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