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Title:
SURFACE EMITTING TYPE SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JPH08340156
Kind Code:
A
Abstract:

PURPOSE: To provide a surface emitting type semiconductor laser of a structure, wherein a luminous spot on a laser luminescent surface is suitable for arranging in close proximity to an object.

CONSTITUTION: One pair of first and second reflecting mirrors 103 are formed on the side of the surface of a semiconductor board 100 with a first electrode 101 formed on its rear and multilayer semiconductor layers 104, 105, 106 and 109 are provided between the mirrors 103. The second clad layer 106 and the contact layer 109 among these multilayer semiconductor layers are etched into a columnar form and are formed into a columnar part 114 and insulative buried layers 107 and 108 are formed on the periphery of this columnar part 114. A second electrode 112, which is formed on the side of the end face of the part 114 and is located on the beam emitting side of a laser, has a plurality of apertures 112a facing the end face of the part 114 and the peripheral edge parts of the apertures 112a are made contact with the end face of the part 114. A second reflecting mirror 112 is formed in such a way as to cover the apertures 112a.


Inventors:
KONDO TAKAYUKI
MORI KATSUMI
KANEKO TAKEO
Application Number:
JP17035695A
Publication Date:
December 24, 1996
Filing Date:
June 13, 1995
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
H01L33/06; H01L33/10; H01L33/12; H01L33/14; H01L33/30; H01S3/105; H01S5/00; H01S5/042; H01S5/183; H01S5/42; (IPC1-7): H01S3/18; H01L33/00; H01S3/105
Attorney, Agent or Firm:
Hajime Inoue (2 outside)