To provide a thin compact surface light source by constituting a light-emitting element, which has a fluorescent film layer that emits a light of complementary color for the light emitted from a gallium nitride-based compound semiconductor and emits while light and emitting the light from the light-emitting element to the outside in a planar form by passing the light through a light-guiding body and reflecting the light by reflecting sections.

A gallium nitride-based compound semiconductor (semiconductor) is constituted by forming an InGaN active layer, etc., on a sapphire substrate and a light-emitting element C, which emits white light is constituted, by forming a fluorescent film layer on the lower surface of the sapphire substrate. The fluorescent film layer is formed by using a fluorescent material having a fluorescent color, which is the complementary color for the color of the light emitted from the semiconductor. Then a light-emitting diode 20 is formed by surrounding the light-emitting element C with a resin case 16. A light-guiding body 24 is formed by cutting an acrylic plate into a rectangular shape, and reflecting sections 21-23 are stuck to the light-guiding body 24. Then a hole is formed through the reflecting section 22 and light-guiding body 24, and the diode 20 is inserted into the hole.