PURPOSE: To produce a surface treated steel for a semiconductor producing device excellent in corrosion resistance by forming an iron oxide layer essentially consisting of Fe2O3 on the surface of a steel and furthermore forming a Cr oxide layer essentially consisting of Cr2O3 thereon respectively in specified thickness in succession.
CONSTITUTION: On the surface of a steel such as a stainless steel and a low alloy steel, an iron oxide layer contg. ≥90% Fe2O3 is formed in the thickness of ι50, preferably in the upper limit of about 500. This iron oxide layer can be obtd. by subjecting the steel to heating treatment, e.g. to about 350 to 450°C in an air atmosphere. Next, on the surface, a Cr oxide layer is formed in ≥50 thickness, preferably in the upper limit of about 1μm. This Cr oxide layer can be formed by chromating treatment, vacuum deposition or the like. Thus, the surface treated steel improved in corrosion resistance in an environment of halogen series gas, particularly, in that in which moisture and halogen series gas are coexistent can be obtd.
HISAMOTO ATSUSHI
IKEDA TSUGUMOTO
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