PURPOSE: To etch an SiN thin-film to a tapered shape with excellent controllability by forming a resist film onto a metallic film shaped directly or through an a-Si film to the upper layer of the SiN film according to a specified pattern, executing wet etching and executing an anisotropic dry etching method.
CONSTITUTION: A lower layer electrode film 2, an SiN film 3 and an upper layer electrode film 4 are laminated onto a glass substrate 1. A resist film 5 having a specified pattern coating a residual section is shaped onto the upper layer electrode film 4, an isotropic wet etching method is executed, and an unnecessary section is removed. The electrode film 4 is gotten rid of gradually toward the inside of the resist film 5 at that time, and the quantity of the film 4 taken off can be controlled by time. Consequently, the end section of the upper layer electrode film 4 is removed, and the film 4 is made slightly smaller than the resist film 5, and the surface of the SiN film 3 is exposed. Gas pressure is selected, an exposed section in the SiN film 3 is gotten rid of through plasma etching, and the end section of the SiN film 3 is formed to a desired tapered shape. The resist film 5 is taken off, a contact metallic layer 6 is shaped, and the upper electrode film 4 and the lower electrode film 2 are connected.
INOUE ATSUSHI
NAITO TAKUYA
OKI KENICHI
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