Title:
半導体装置のための終端構造及びこの構造の製造方法
Document Type and Number:
Japanese Patent JP2006526287
Kind Code:
A
Abstract:
A semiconductor device has a semiconductor body ( 22 ) comprising an active area ( 7 ) and a termination structure ( 16 ) surrounding the active area. The termination structure comprises a plurality of lateral transistor devices ( 2 a to 2 d) connected in series and extending from the active area towards a peripheral edge ( 42 ) of the semiconductor body, with a zener diode ( 8 ) connected to the gate electrode ( 4 ) of one of the lateral devices for controlling its gate voltage, such that a voltage difference between the active area and the peripheral edge is distributed across the lateral devices and the zener diode. The termination structure ( 16 ) is capable of withstanding higher voltages in a compact manner and features thereof are susceptible to fabrication in the same process steps as features of the active area ( 7 ).
Inventors:
Raymond, Jay Glover
Application Number:
JP2006508423A
Publication Date:
November 16, 2006
Filing Date:
May 21, 2004
Export Citation:
Assignee:
Koninklijke Philips Electronics N.V.
International Classes:
H01L29/78; H01L27/04; H01L27/06; H01L29/06; H01L29/40; H01L29/739; H01L29/866; H01L29/417
Attorney, Agent or Firm:
Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki