TEST METHOD OF SEMICONDUCTOR DEVICE

Japanese Patent JPS5679442

A

PURPOSE:To facilitate the testing of a semiconductor device by a method wherein when an air tightness of the semiconductor element sealed by a sealing liquid in an insulation cylinder is tested, the semiconductor device is immersed in the test liquid having electrical and chemical characteristics inferior to those of the sealing liquid and then a high pressure is applied to the semiconductor device to compare the characteristics concerned of before and after the application of the pressure. CONSTITUTION:Diode element 1 having a cathodeconductor 2 and an anode conductor 3 at the front and the back surfaces thereof is stored in the insulated cylinder 4, while one of the end surfaces of the cylinder 4 and the side surface of the conductor 2 are connected with each other by a flange 5, and silicone oil 8 is filled between the element 1 and the inner wall of the cylinder 4. Then, welding plates 6 and 7 are placed between the other end surface of the cylinder 4 and the side surface of the conductor 3, resulting in forming such a device as used in a high outer pressure condition. Then, the positive terminal of the measuring device is conected to the conductor 2 and the negative terminal of the measuring device is connected to the conductor 3, respectively, and then a voltage is applied thereto and leakage current is measured and recorded. The cylinder 4 is stored in a tank filled with spindle oil, etc. having a characteristic inferior to that of silicone oil and a pressure of about 400kg/cm<2> is applied thereto. Then, the assembly is drawn out and a similar measurment is performed to compare the leakage currents before and after the comparison.

OOKATA MITSUO

JP15650179A

June 30, 1981

November 30, 1979

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MITSUBISHI ELECTRIC CORP

G01R31/26; H01L21/66; H01L23/22; (IPC1-7): G01R31/26; H01L23/02

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