PURPOSE: To simplify the manufacturing processes, enhance the yield from production line, and suppress the cost by forming a clear electrode of EL light emitting element, affixing a common insulation layer so as to cover a gate electrode and the clear electrode, and forming No.1 insulation layer and a gate insulation layer.

CONSTITUTION: On a base board 1 made of glass, etc., are put one over another a clear electrode 12 of In Sn oxide etc., No.1 insulation layer 13 of Si nitride film (a-SiN), a light emission layer 14 of Zn sulfuride, No.2 insulation layer 15 of A-SiN, and a metal electrode 16 of Al. TFT of a switching element Q is formed by laminating on the base board 1 one over another a gate electrode 22 of Cr, a gate insulation layer 23 of a-SiN, a semiconductor activating layer 24 of amorphous Si, and an upper insulation layer 25 of a-SiN, wherein an ohmic contact layer 26 of n+amorphous Si is formed with the upper insulation layer 25 pinched, and thereover a diffusion preventive layer 27 of Cr is provided. Therein the gate insulation layer 23 of TFT and No.2 insulation layer 15 are formed simultaneously as a common layer, so that the gate insulation layer 23 of the TFT is not influenced by annealing of ZnS of the light emission layer 14.