To perform thermal desorption analysis stably and to analyze the entire substrate, e.g. a silicon wafer, as a sample.
In the analyzing chamber 14, a hot plate 22 incorporating a heater 24 and an electrode 23 is set in a vacuum tank 15 to be evacuated and a sample 20 carried into the vacuum tank 15 is mounted on the hot plate 22. When the heater 24 is heated while being attracted electrostatically to the electrode 23, temperature of the sample 20 increases and gas is emitted from substances adhering to the surface thereof. The vacuum tank 15 is coupled with an analyzer 16 for analyzing gas contained in the vacuum atmosphere. Since the sample 20 is heated by the hot plate 22, the kind and quantity of substances adhering to the surface of a sample, i.e., a large area substrate, can be analyzed.
HAYASHI TOSHIO
CHIN TAKASHI
MIZUTANI NAOKI
HARA YASUHIRO
