熱電変換素子及び熱電変換モジュール

Japanese Patent JP7138307

B2

With regard to a thermoelectric conversion element using an MgSbBiTe thermoelectric conversion material, a novel technique which provides a lowered electric resistance is surely provided. The thermoelectric conversion element according to the present disclosure comprises a first electrode, a second electrode, a first intermediate layer, a second intermediate layer and a thermoelectric conversion layer. The first intermediate layer is provided between the thermoelectric conversion layer and the first electrode. The first intermediate layer is in contact with the thermoelectric conversion layer. The first electrode is in contact with the first intermediate layer. The second intermediate layer is provided between the thermoelectric conversion layer and the second electrode. The second intermediate layer is in contact with the thermoelectric conversion layer. The second electrode is in contact with the second intermediate layer. The first electrode and the second electrode are composed of a CuZn alloy. The thermoelectric conversion layer is composed of an MgSbBiTe thermoelectric conversion material. A composition of the first intermediate layer is different from both a composition of the first electrode and a composition of the thermoelectric conversion layer. A composition of the second intermediate layer is different from both a composition of the second electrode and a composition of the thermoelectric conversion layer.

Uehara Miho
Kaneko Yuriko
Ono Atsushi
Masashige Kawabe
Tsutomu Kanno
Hiromasa Tamaki
Hiroki Sato

JP2019515372A

September 16, 2022

November 12, 2018

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Panasonic IP Management Co., Ltd.

H01L35/08; C22C23/00; H01L35/16

JP2017085050A
JP2014509074A
JP2013161948A
JP2018190953A

WO2017072982A1

Koichi Kamata
Masatoshi Furuta

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