Title:
熱電変換材料、熱電変換素子および熱電変換モジュール
Document Type and Number:
Japanese Patent JP6949850
Kind Code:
B2
Abstract:
A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.
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Inventors:
Adachi Masahiro
Makoto Kiyama
Yoshiyuki Yamamoto
Tsunehiro Takeuchi
Makoto Kiyama
Yoshiyuki Yamamoto
Tsunehiro Takeuchi
Application Number:
JP2018537294A
Publication Date:
October 13, 2021
Filing Date:
August 29, 2017
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
School corporation Toyota Gakuen
School corporation Toyota Gakuen
International Classes:
H01L35/18; G01J1/02; H01L35/14
Domestic Patent References:
| JP2012523717A | ||||
| JP2003031860A | ||||
| JP2011054850A |
Foreign References:
| WO1999022410A1 | ||||
| WO2014196475A1 | ||||
| US20140174494 |
Other References:
TAKAGIWA, Yoshiki et al.,Validity of rigid band approximation of PbTe thermoelectric materials,APL MATERIALS,2013年,Vol.1,pp.011101
TAKIGUCHI, Hiroaki et al.,Nano Structural and Thermoelectric Propertoes of SiGeAu Thin Films,Japanese Journal of Applied Physics,2011年,Vol.50,pp.041301
HEREMANS, Joseoh P. et al.,Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States,SCIENCE,2008年,Vol.321,pp.554-557
MERRILL, Devin R. et al.,The Synthesis, Structure, and Electrical Characterization of (SnSe)1.2TiSe2,European Journal of Inorganic Chemistry,2015年,pp.83-91
FUKUSHIMA Kimichika et al.,Electronic Structure Calculations for Au-doped Ge and Si with a Possible High Thermoelectric Power,Japanese Journal of Applied Physics,2001年,Vol.40, Part.1, No.5A,pp.3226-3230
NISHINO.S et al.,Thermal Conductivity Measurement of Liquid-Quenched Higher Manganese Silicides,Journal of Electronic Materials,2016年03月,Vol.45, No.3,pp.1821-1826
CHEN, Xi et al.,Enhanced thermoelectric power factor of Re-substituted higher manganese silicides with small islands,Journal of Material Chemistry C,2015年,Vol.3,pp.10500-10508
TAKIGUCHI, Hiroaki et al.,Nano Structural and Thermoelectric Propertoes of SiGeAu Thin Films,Japanese Journal of Applied Physics,2011年,Vol.50,pp.041301
HEREMANS, Joseoh P. et al.,Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States,SCIENCE,2008年,Vol.321,pp.554-557
MERRILL, Devin R. et al.,The Synthesis, Structure, and Electrical Characterization of (SnSe)1.2TiSe2,European Journal of Inorganic Chemistry,2015年,pp.83-91
FUKUSHIMA Kimichika et al.,Electronic Structure Calculations for Au-doped Ge and Si with a Possible High Thermoelectric Power,Japanese Journal of Applied Physics,2001年,Vol.40, Part.1, No.5A,pp.3226-3230
NISHINO.S et al.,Thermal Conductivity Measurement of Liquid-Quenched Higher Manganese Silicides,Journal of Electronic Materials,2016年03月,Vol.45, No.3,pp.1821-1826
CHEN, Xi et al.,Enhanced thermoelectric power factor of Re-substituted higher manganese silicides with small islands,Journal of Material Chemistry C,2015年,Vol.3,pp.10500-10508
Attorney, Agent or Firm:
Shuhei Kitano
Katsuya Tanaka
Katsuya Tanaka