Title:
THICK FILM RESISTOR AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3042180
Kind Code:
B2
Abstract:
PURPOSE: To obtain a thick film resistor, formed on an alumina substrate, having less variability in the initial resistance value and also little variation of resistance value by heat.
CONSTITUTION: In the title thick film resistor having the structure wherein a resistance film, which is mainly composed of conductive particles and PbO- SiO2-B2O3-Al2O3 glass, is baked on an alumina substrate, the crystal of MA2Si2O8 (M indicates one or more kinds of Pb, Ca, Sr, Ba, Eu, Gd, Nd, Sm and Dy) is presented between the alumina substrate and the resistance film.
More Like This:
Inventors:
Kenji Adachi
Hitomi Moriwaki
Shigekazu Nishii
Hitomi Moriwaki
Shigekazu Nishii
Application Number:
JP16215392A
Publication Date:
May 15, 2000
Filing Date:
May 28, 1992
Export Citation:
Assignee:
Sumitomo Metal Mining Co., Ltd.
International Classes:
H01C7/00; H01C17/06; (IPC1-7): H01C7/00; H01C17/06
Domestic Patent References:
| JP483305A | ||||
| JP5515930A | ||||
| JP61206458U |
Attorney, Agent or Firm:
Masao Yamamoto